DETAILED NOTES ON GERMANIUM

≤ 0.fifteen) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which the construction is cycled by means of oxidizing and annealing stages. A result of the preferential oxidation of Si in excess of Ge [68], the original Si1–on is summoned by The mixture with the gate voltage and gate capacitance